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The dynamics of self-organization of hexagonal pore arrays during anodic etching and oxidation of semiconductors and metals

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Abstract

The dynamics of self-organization in the q space of hexagonal pore arrays during anodic oxidation of aluminum and anodic etching of silicon for various times has been traced by means of the Fourier transform of micrographs obtained by scanning electron microscopy of the resulting porous surfaces of Al2O3 and silicon. The results of application of the nonlinear defect-deformation theory of self-organized hexagonal pore arrays to the description of this dynamics are considered on a qualitative level.

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Authors and Affiliations

  1. Moscow State University, Moscow, Russia

    V. I. Emel’yanov & V. V. Igumnov

  2. Institute for Problems of Microelectronic Technologies, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

    V. V. Starkov

Authors
  1. V. I. Emel’yanov
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  2. V. V. Igumnov
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  3. V. V. Starkov
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 10, 2004, pp. 83–88.

Original Russian Text Copyright © 2004 by Emel’yanov, Igumnov, Starkov.

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Emel’yanov, V.I., Igumnov, V.V. & Starkov, V.V. The dynamics of self-organization of hexagonal pore arrays during anodic etching and oxidation of semiconductors and metals. Tech. Phys. Lett. 30, 438–440 (2004). https://doi.org/10.1134/1.1760879

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  • DOI: https://doi.org/10.1134/1.1760879

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